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NTE67 MOSFET N-Ch, Enhancement Mode High Speed Switch
Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximum Ratings: Drain-Source Voltage (TJ = +25C to +150C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain-Gate Voltage (RGS = 1M, TJ = +25C to +125C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/8" from case, 5sec max.), TL . . . . . . . . . . . . . . . . . . . +300C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W Thermal Resistance, Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS 0.24K/W Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 17mH, Vdd = 50V, RG = 25, Starting TJ = +25C.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Zero Gate Voltage Drain Current Symbol BVDSS VGS(th) IGSS IGSS IDSS Test Conditions VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = -20V VDS = Max. Rating, VGS = 0V VDS = Max. Rating x 0.8, VGS = 0V, TC = +125C On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1 RDS(on) VGS = 10V, ID = 3A, Note 1 gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VGS = 10V, ID = 5.5A, VDS = 0.8 Max. Rating (Gate charge is essentially independent of operating temperature) VDD = 0.5BVDSS, ID = 5.5A, ZO = 12 (MOSFET switching times are essentially independent of operating temperature) VDS 50V, ID = 3A, Note 1 VGS = 0V, VDS = 25V, f = 1MHz Min 400 2.0 - - - - 4.5 - 2.9 - - - - - - - - - - Typ - - - - - - - 1.0 4.4 780 99 43 11 19 37 16 18 40 14 Max - 4.0 100 -100 250 1000 - 1.5 - - - - 17 29 56 24 30 - - Unit V V nA nA A A A mhos pF pF pF ns ns ns ns nC nC nC
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Source-Drain Diode Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Symbol IS ISM VSD trr Note 2 TC = +25C, IS = 4.5A, VGS = 0V TJ = +25C, IF = 5.5A, dIF/dt = 100A/s Test Conditions Min - - - - Typ - - - 310 Max 4.5 18 1.6 660 Unit A A V ns
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab

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